A comparison between the interface properties of N2O-nitrided and N2O-grown oxides
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Novel N/sub 2/O-oxynitridation technology for forming highly reliable EEPROM tunnel oxide films
2. Furnace nitridation of thermal SiO/sub 2/ in pure N/sub 2/O ambient for ULSI MOS applications
3. Lo, G. Q., Ting, W., Ahn, J. and Kwong, D. L., Tech. Dig. Symp. VLSI Tech., 43, 1991
4. MOS characteristics of NH/sub 3/-nitrided N/sub 2/O-grown oxides
5. A novel technique of N/sub 2/O-treatment on NH/sub 3/-nitrided oxide as gate dielectric for nMOS transistors
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