A three-dimensional nonlinear analysis of electromigration-induced resistance change and Joule heating in microelectronic interconnects
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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3. Comparison of Al electromigration in conventional Al-alloy and W-contacts to silicon;Oates;Appl Phys Lett,1993
4. Kawasaki H, Lee C, Anderson SGH, Pintchovski F. The effect of test structure and stress condition on electromigration failure. Third International Workshop on Stress-Induced Phenomena in Metallization, AIP, Palo Alto, 1995. p. 185
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2. Failure Criterion Setting for the Wafer Level Isothermal Electromigration Test;IEEE Transactions on Semiconductor Manufacturing;2011-02
3. Influence of Joule heating during electromigration evaluation of silver lines;Thin Solid Films;2009-01
4. Comprehensive modeling of electromigration induced interconnect degradation mechanisms;2008 26th International Conference on Microelectronics;2008-05
5. Void growth modeling upon electromigration stressing in narrow copper lines;Journal of Applied Physics;2007-12-15
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