Physical bending of heteroepitaxial diamond grown on an Ir/MgO substrate-Reference-Cited by-同舟云学术

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Physical bending of heteroepitaxial diamond grown on an Ir/MgO substrate

Published:2023-08 Issue: Volume:137 Page:110055
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Kimura Yutaka,Ihara Takahiro,Ojima Takumi,Oshima Ryuji,Sawabe Atsuhito,Aida Hideo

Funder

Japan Society for the Promotion of Science

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference42 articles.

1. CVD Diamond for Electronics and Sensors,2009

2. Heteroepitaxial diamond films on silicon (001): Interface structure and crystallographic relations between film and substrate;Jia;Phys. Rev. B,1995

3. Oriented diamond films grown on nickel substrates;Zhu;Appl. Phys. Lett.,1993

4. Heteroepitaxial growth of diamond on c-BN in a microwave plasma;Maeda;Diam. Relat. Mater.,1994

5. Bias-enhanced nucleation of highly oriented diamond on titanium carbide (111) substrates;Wolter;Appl. Phys. Lett.,1995

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of two-inch free-standing heteroepitaxial diamond on Ir/YSZ/Si (001) substrates via laser-patterned templates;Journal of Semiconductors;2024-09-01

2. Structural and Photoelectronic Properties of κ-Ga2O3 Thin Films Grown on Polycrystalline Diamond Substrates;Materials;2024-01-22

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