Author:
Wang W.,Hu C.,Li F.N.,Li S.Y.,Liu Z.C.,Wang F.,Fu J.,Wang H.X.
Funder
National High-tech R&D Program of China
Subject
Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. High carrier mobility in single-crystal plasma-deposited diamond;Isberg;Science,2002
2. Hole-drift velocity in natural diamond;Reggiani;Phys. Rev. B Condens. Matter,1981
3. Diamond Schottky barrier diode for high-temperature, high-power, and fast switching applications;Umezawa;Jpn. J. Appl. Phys.,2014
4. High temperature, high voltage operation of diamond Schottky diode;Vescan;Diam. Relat. Mater.,1998
5. Schottky junction properties of the high conductivity layer of diamond;Takeuchi;Diam. Relat. Mater.,2002
Cited by
11 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献