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Radiation damage of silicon microstrip detectors by high doses of electrons

  • Published:2003-10 Issue:3 Volume:511 Page:328-334
  • ISSN:0168-9002
  • Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
  • language:en
  • Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Takahashi T,Ukai M,Yoshida A,Fujii Y,Dobashi K,Hashimoto O,Maeda K,Miyamoto A,Miyoshi T,Nakamura S.N,Okayasu Y,Tamae T,Tamura H,Tsukada K,Watanabe T

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaAs detectors irradiated by low doses of electrons;Journal of Instrumentation;2014-04-24

2. Charge collection efficiency study of silicon microstrip sensors;Journal of the Korean Physical Society;2013-10

3. Fabrication and characterization of silicon detectors for use in radiotherapy dosimetry, pre-irradiated by high-energy electrons;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2007-06
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