Investigation of Ni/4H-SiC diodes as radiation detectors with low doped n-type 4H-SiC epilayers-Reference-Cited by-同舟云学术

Investigation of Ni/4H-SiC diodes as radiation detectors with low doped n-type 4H-SiC epilayers

Published:2003-09 Issue:3 Volume:510 Page:273-280
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Nava F.,Wagner G.,Lanzieri C.,Vanni P.,Vittone E.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference30 articles.

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2. A.K. Agarwal, et al., in: IEDM International Electron Device Meeting Proceedings, 1996, p. 225.

3. Development of a silicon carbide radiation detector

4. Simultaneous measurement of neutron and gamma-ray radiation levels from a TRIGA reactor core using silicon carbide semiconductor detectors

5. Epitaxial silicon carbide charge particle detectors

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