Funder
National Natural Science Foundation of China
South China Normal University - Shipai Campus
Natural Science Foundation of Guangdong Province
Natural Science Foundation of Jiangsu Province
Special Project for Research and Development in Key areas of Guangdong Province
Subject
Electrical and Electronic Engineering
Reference33 articles.
1. Highly scaled graded channel GaN HEMT with peak drain current of 2.48 A/mm;Khh;AEU Int J Electron Commun,2021
2. Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications;Arivazhagan;AEU: Archiv Elektron Ubertragungstechnik: Electron Commun,2019
3. The dual-suppression of peak electric field in AlGaN/GaN HEMT with sandwich structure;Zou;Superlattices Microstruct,2021
4. Effect of GaN channel layer thickness on DC and RF performance of GaN HEMTs with composite AlGaN/GaN buffer;Wang;IEEE Trans Electron Devices,2014
5. SiNx /InAlN/AlN/GaN MIS-HEMTs with 10.8 THz⋅V Johnson figure of merit;Downey;IEEE Electron Device Lett,2014
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