Non-parabolic macroscopic transport models for semiconductor device simulation-Reference-Cited by-同舟云学术

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Non-parabolic macroscopic transport models for semiconductor device simulation

Published:2005-04 Issue:1-2 Volume:349 Page:221-258
ISSN:0378-4371
Container-title:Physica A: Statistical Mechanics and its Applications
language:en
Short-container-title:Physica A: Statistical Mechanics and its Applications

Author:

Grasser Tibor

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Statistics and Probability

Reference47 articles.

1. Analysis and Simulation of Semiconductor Devices;Selberherr,1984

2. Transport equations for electrons in two-valley semiconductors;Bløtekjær;IEEE Trans. Electron. Dev.,1970

3. Diffusion of hot and cold electrons in semiconductor barriers;Stratton;Phys. Rev.,1962

4. A review of hydrodynamic and energy-transport models for semiconductor device simulation;Grasser;Proc. IEEE,2003

5. The Mathematical Theory of Non-Uniform Gases;Chapman,1999

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Lower limits to metal-semiconductor contact resistance: Theoretical models and experimental data;Journal of Applied Physics;2013-10-21

2. Modeling and Simulation Approaches for Drain Current Computation;Nanoscale CMOS;2013-03-05

3. Applicability of Macroscopic Transport Models to Decananometer MOSFETs;IEEE Transactions on Electron Devices;2012-03

4. Classical Device Modeling;Nano-Electronic Devices;2011

5. Hydrodynamic Equations;Transport Equations for Semiconductors;2009

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