Effects of annealing on the luminescent properties from defects formed in electron-irradiated GaN-Reference-Cited by-同舟云学术

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Effects of annealing on the luminescent properties from defects formed in electron-irradiated GaN

Published:2012-10 Issue:10 Volume:47 Page:965-969
ISSN:1350-4487
Container-title:Radiation Measurements
language:en
Short-container-title:Radiation Measurements

Author:

Liang L.M.,Xie X.J.,Hao Q.Y.,Tian Y.,Liu C.C.

Publisher

Elsevier BV

Subject

Instrumentation,Radiation

Reference17 articles.

1. Contribution from gallium vacancies and carbon-related defects to the “yellow luminescence” in GaN;Armitage;Appl. Phys. Lett.,2003

2. Optical detection of electron paramagnetic resonance in electron-irradiated GaN;Bozdog;Phys. Rev. B,1999

3. Microstructure and optical properties of GaN films on sapphire substrates;Chen;Mater. Des.,2000

4. Effect of buffer layers and stacking faults on the reduction of threading dislocation density in GaN overlayers grown by metalorganic chemical vapor deposition;Cho;J. Appl. Phys.,2001

5. Detection of interstitial Ga in GaN;Chow;Phys. Rev. Lett.,2000

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review of radiation damage in GaN-based materials and devices;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2013-09

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