Silicide formation study at the interface of Zr/Si system using high-energy swift heavy ion

Author:

Sisodia Veenu,Bolse Wolfgang,Avasthi D.K.,Kabiraj D.,Jain I.P.

Publisher

Elsevier BV

Subject

Instrumentation,Radiation

Reference12 articles.

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2. Electronic structure: wide band-narrow band and correlated systems-transient enhanced diffusion of oxygen in Fe mediated;Avasthi;Phys. Rev. B,2003

3. Atomic mixing in thin film systems by swift heavy ions;Bolse;Nucl. Instrum. Methods B,2002

4. Investigations of V/Si mixing induced by swift heavy ions;Diva;Nucl. Instrum. Methods B,2003

5. Algorithms for the rapid simulation of Rutherford Backscattering Spectroscopy;Doolittle;Nucl. Instrum. Methods B,1985

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. The surface morphology evolution of ZrSi2 films under different substrate temperature;Materials Research Express;2019-11-08

2. FORMATION OF PLATINUM SILICIDE DURING RAPID THERMAL PROCESSING OF THE PLATINUM- SILICON SYSTEM: MICROSTRUCTURE AND ELECTROPHYSICAL CHARACTERISTICS;High Temperature Material Processes An International Quarterly of High-Technology Plasma Processes;2019

3. Surface and interface modification of Zr/SiC interface by swift heavy ion irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-07

4. Formation of zirconium silicide between silicon substrate and zirconium films;Materials Letters;2014-05

5. Ion beam induced surface and interface engineering;Surface Science Reports;2011-03

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