Alteration on the surface of the pore walls of the porous silicon under high temperature ageing: Computer simulation-Reference-Cited by-同舟云学术

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Alteration on the surface of the pore walls of the porous silicon under high temperature ageing: Computer simulation

Published:2007-04 Issue:4-5 Volume:42 Page:739-741
ISSN:1350-4487
Container-title:Radiation Measurements
language:en
Short-container-title:Radiation Measurements

Author:

Balabay R.,Chernonog E.

Publisher

Elsevier BV

Subject

Instrumentation,Radiation

Reference6 articles.

1. Light Emission from Porous Silicon;Iyer,1992

2. Microstructure and optical properties of free standing porous silicon films;Kanemitsu;Phys. Rev. B,1993

3. K voprosu o temperaturnoy zavisimosti fotoluminescencii poristogo kremniya;Kashkarov;FTP,1997

4. Adsorbcionnie izmeneniya na poverhnosti poristogo kremniya v processe estestvennogo i visokotemperaturnogo stareniya;Orlov;Pisma v JTF,2001

5. Theory of the quantum confinement effect on excitions in quantum dots of indirect gap materials;Takagahara;Phys. Rev. B,1992

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