Thin SiOx layers embedded in single crystalline silicon
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. MOS Physics and Technology;Nicollian,1982
2. Electron spin resonance and hopping conductivity of a-SiOx
3. Controlled growth of SiO2 tunnel barrier and crystalline Si quantum wells for Si resonant tunneling diodes
4. 1.54‐μm electroluminescence of erbium‐doped silicon grown by molecular beam epitaxy
5. Electroluminescence of erbium–oxygen‐doped silicon diodes grown by molecular beam epitaxy
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1. Multilayer structures of silicon-suboxide embedded in single crystal silicon;Journal of Crystal Growth;2014-03
2. Mechanisms controlling the phase and dislocation density in epitaxial silicon films grown from silane below 800 °C;Applied Physics Letters;2010-05-17
3. Quantum confinement in rare-earth doped semiconductor systems;Current Opinion in Solid State and Materials Science;2003-04
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