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Laser spot size dependence of photo-induced crystallization process in amorphous GeSe2 film

  • Published:1996-05 Issue: Volume:198-200 Page:740-743
  • ISSN:0022-3093
  • Container-title:Journal of Non-Crystalline Solids
  • language:en
  • Short-container-title:Journal of Non-Crystalline Solids

Author:

Nakamura Mitsutaka,Wang Yong,Matsuda Osamu,Inoue Koichi,Murase Kazuo

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Light-Induced Phenomena;Amorphous Chalcogenide Semiconductors and Related Materials;2021

2. Direct Wide Bandgap 2D GeSe 2 Monolayer toward Anisotropic UV Photodetection;Advanced Optical Materials;2019-07-04

3. High nonlinear behavior of optical reflectivity in surface plasmon resonance structures which contain amorphous As2S3 thin films;Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IX;2018-12-31

4. Role of Ag additives on light-induced metastable defects in a Se–In glassy system;Journal of Taibah University for Science;2017-11

5. Crystallization of sputter-deposited amorphous Ge films by electron irradiation: Effect of low-flux pre-irradiation;Journal of Applied Physics;2016-10-06
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