Gap state distribution of amorphous hydrogenated Si and Si:Ge alloys
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. Study of gap states in hydrogenated amorphous silicon by transient and steady-state photoconductivity measurements
2. Transient photoconductivity and photo-induced optical absorption in amorphous semiconductors
3. Concepts in Photoconductivity and Applied Problems;Rose,1978
4. Light-induced aging effects in Schottky diodes on sputtered hydrogenated amorphous silicon (a-SiH) : interpretation of the photovoltaic stability
5. Proc. European Conf. on Photovoltaic Solar Energy;Beichler,1982
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1. Ambipolar Performances of Novel Amorphous Silicon-Germanium Alloy Thin-Film Transistors;Japanese Journal of Applied Physics;1993-08-01
2. Comment on the Determination of the Midgap Density of States in Amorphous Semiconductors Using the Space-Charge-Limited-Current Method;physica status solidi (b);1989-06-01
3. Dominant recombination process in amorphous silicon alloys;Journal of Applied Physics;1985-08-15
4. Structural, electrical, and optical properties ofa-Si1−xGex:H and an inferred electronic band structure;Physical Review B;1985-02-15
5. Amorphous silicon bibliography 1983 update introduction;Solar Cells;1985-02
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