Characterization of highly photoconductive amorphous silicon germanium alloys prepared by DC glow discharge-Reference-Cited by-同舟云学术

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Characterization of highly photoconductive amorphous silicon germanium alloys prepared by DC glow discharge

Published:1987-12 Issue: Volume:97-98 Page:1071-1074
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Weller H.C.,Kessler F.,Lotter E.,Nebel C.E.,Paasche S.M.,Bauer G.H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Hydrogenated Amorphous Silicon Germanium Alloys Prepared by Triode rf Glow Discharge

2. 19th IEEE PVSC;Weller,1987

3. The investigation of excess carrier lifetimes in amorphous silicon by transient methods

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1. Optimization of light-induced metastable changes in hydrogenated amorphous silicon-germanium alloys;Philosophical Magazine B;1997-06

2. Raman scattering studies of amorphous SixGe1−x:H alloy films produced by hot-filament assisted chemical vapour deposition technique;Thin Solid Films;1997-06

3. Improvement of microstructure of amorphous silicon–germanium alloys by hydrogen dilution;Journal of Applied Physics;1995-10-15

4. Influence of deposition parameters on defect formation in a-SiGe:H alloys;Philosophical Magazine B;1995-05

5. Growth of device quality amorphous SiGe:H alloys with high deposition rate under helium dilution;Journal of Applied Physics;1994-12

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