Plasma spectroscopy control and analysis of a-Si:H deposition-Reference-Cited by-同舟云学术

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Plasma spectroscopy control and analysis of a-Si:H deposition

Published:1980-01 Issue: Volume:35-36 Page:183-188
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Matsuda A.,Nakagawa K.,Tanaka K.,Matsumura M.,Yamasaki S.,Okushi H.,Iizima S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Doping, Schottky barrier and pn junction formation in amorphous germanium and silicon by rf sputtering

2. The Preparation and Properties of Amorphous Silicon

3. R.F. sputtering

4. Proc. 10th Conf. Solid State Devices;Knights,1978

5. to be published in Proc. 11th Conf. Solid State Devices;Iizima,1979

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