Properties of RF sputtered hydrogenated amorphous germanium-silicon alloys
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. The fundamental absorption of amorphous Ge, Si and GeSi alloys
2. Structure and Raman Scattering of AmorphousGe0.5Si0.5
3. The effects of annealing and rate of deposition on the electrical, optical and structural properties of amorphous GeSi alloy films
4. Evaluation of Mott's Parameters for Hopping Conduction in Amorphous Ge, Si, and Se-Si
5. Optical properties of amorphous SixGe1−x(H) alloys prepared by R.F. Glow discharge
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1. Electrical Properties of Amorphous S0.60Ge0.40:Hx Films;Inorganic Materials;2005-07
2. The effect of variation in hydrogen dilution and RF power density on the properties of a-SiGe:H and related solar cells;Journal of Physics D: Applied Physics;1996-06-14
3. Optical and Structural Properties of α-Si1-xCx Films;MRS Proceedings;1996
4. Properties of sputtered amorphous and microcrystalline GaAs films;Thin Solid Films;1995-01
5. The effect of ion bombardment on some properties of a-Si0.8Ge0.2:H alloys prepared by ion beam-assited reactive evaporation;Thin Solid Films;1994-09
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