Polysilicon produced by excimer (ArF) laser crystallisation and low-temperature (600°C) furnace crystallisation of hydrogenated amorphous silicon (a-Si:H)-Reference-Cited by-同舟云学术

Polysilicon produced by excimer (ArF) laser crystallisation and low-temperature (600°C) furnace crystallisation of hydrogenated amorphous silicon (a-Si:H)

Published:1993-12 Issue: Volume:164-166 Page:1001-1004
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Dyer T.E.,Marshall J.M.,Pickin W.,Hepburn A.R.,Davies J.F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Excimer-laser-annealed poly-Si thin-film transistors

2. Polycrystalline Semiconductors II;Bachrach,1991

3. Influence of hydrogen on the structure and surface morphology of pulsed ArF excimer laser crystallized amorphous silicon thin films

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