Defect structure and stability of a-Si:H by modulated photocurrent studies
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. The energy of the dangling-bond states in a-Si
2. Defects in Amorphous Silicon: A New Perspective
3. Structure and Electronic States in Disordered Systems
4. Spatially resolved and energy-resolved defect kinetics ina-Si:H: A comprehensive study by phase-shift analysis of modulated photocurrents
5. G. Schumm and G.H. Bauer, in: MRS Symp. Proc. 149, eds. A. Madan, M. Thompson, P.C. Taylor, P.G. LeComber and Y. Hamakawa (in print).
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1. Determination of thermal annealing effect in intrinsic a-Si:H film;Journal of Non-Crystalline Solids;2000-10
2. Effect of reverse-bias annealing on thermal equilibrium changes in hydrogenated amorphous germanium;Semiconductor Science and Technology;1999-11-04
3. The investigation of the annealing effect on hydrogenated amorphous silicon pin diodes by capacitance techniques;Semiconductor Science and Technology;1998-11-01
4. The bias-annealing effect on a-Si:H photodiode;Journal of Non-Crystalline Solids;1996-05
5. Thermodynamical equilibrium gap-state distribution in undoped a-Si: H;Philosophical Magazine B;1991-10
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