Optimization of Al/a-SiC:H optical sensor device by means of thermal annealing
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference24 articles.
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Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Decay processes of photoluminescence in a nanocrystalline SiC thin film;Applied Surface Science;2011-12
2. Optimization of the contact resistance in the interface structure of n-type Al/a-SiC:H by thermal annealing for optoelectronics applications;physica status solidi (a);2010-05-31
3. EPR study of carbon and silicon related defects in carbon-rich hydrogenated amorphous silicon-carbon films;Physical Review B;2010-04-22
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