Threshold voltage model for small geometry AlGaN/GaN HEMTs based on analytical solution of 3-D Poisson's equation-Reference-Cited by-同舟云学术

Threshold voltage model for small geometry AlGaN/GaN HEMTs based on analytical solution of 3-D Poisson's equation

Published:2007-10 Issue:10-11 Volume:38 Page:1013-1020
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Kumar Sona P.,Agrawal Anju,Chaujar Rishu,Kabra Sneha,Gupta Mridula,Gupta R.S.

Publisher

Elsevier BV

Subject

General Engineering

Reference16 articles.

1. An analysis for AlGaN/GaN modulation doped field effect transistor using accurate velocity—field dependence for high power microwave frequency applications;Kumar;MEJ,2006

2. Growth and applications of group III-nitride;Ambacher;J. Appl. Phys.,1998

3. AlGaN/GaN high electron mobility transistors with InGaN back-barriers;Palacios;IEEE Electron. Device Lett.,2006

4. Application of GaN-based heterojunction FETs for advanced wireless communication;Ohno;IEEE Trans. Electron. Devices,2001

5. High Speed Heterostructure Devices;Roblin,2002

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and electrical modelling of a depletion-mode P-type triple-field-plated AlGaN/GaN on SiC HEMT with 2.45 kV breakdown voltage;Microsystem Technologies;2024-02-16

2. Estimation of electrostatic, analogue, Linearity/RF figures-of-merit for GaN/SiC HEMT;Micro and Nanostructures;2024-02

3. Sensitivity Analysis of HEMT Biosensor for Variation in Al_x Ga_1-xN Layer Alloy Composition, Bulk Trap and Doping;2024 IEEE 3rd International Conference on Control, Instrumentation, Energy & Communication (CIEC);2024-01-25

4. Analysis of High-Temperature Effects on $$InAs/In_{0.3}Al_{0.7}As/InSb/In_{0.3}Al_{0.7}As$$ pHEMTs on Accessing RF/Analog performance: A Machine Learning Predictive Modeling;Transactions on Electrical and Electronic Materials;2023-11-09

5. Analytical modeling of I–V characteristics using 2D Poisson equations in AlN/β-Ga2O3 HEMT;Materials Science in Semiconductor Processing;2022-07