Analytical modeling for 3D potential distribution of rectangular gate (RecG) gate-all-around (GAA) MOSFET in subthreshold and strong inversion regions
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference23 articles.
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1. Analytical Modeling of Threshold Voltage for Dual-Metal Double-Gate Gate-All-Around (DM-DG-GAA) MOSFET;Silicon;2020-08-13
2. Investigation on Quadruple Gate FinFET Structure in Absence of All the Corner Metal Gate Regions;2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS);2020-07
3. 3D Analytical Modeling of Potential, Drain Current, and Threshold Characteristics for Long-Channel Square Gate-All-Around (SGAA) MOSFETs;Recent Advances in Engineering Mathematics and Physics;2020
4. Modeling of Drain Current and Analog Characteristics of Dual-Metal Quadruple Gate (DMQG) MOSFETs;2019 IEEE International Symposium on Smart Electronic Systems (iSES) (Formerly iNiS);2019-12
5. Magnetic Field Effect on Threshold Voltage for Ultrathin Silicon Gate-All-Around Nanowire Field-Effect-Transistors;Silicon;2019-02-04
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