1. Dynamic range requirements of digital vs. rf and tiled beamforming in mm-wave massive mimo;Farid;IEEE Radio and Wireless Symp. (RWS),2021
2. A reliability enhanced 5nm cmos technology featuring 5th generation finfet with fully developed euv and high mobility channel for mobile soc and high-performance computing application;Liu;IEEE Int. Electron Dev. Meet. (IEDM),2020
3. RF performance of stacked Si nanosheets/nanowires;Lin;IEEE Electron. Device Lett.,2022
4. Stacked nanosheet gate-all-around transistor to enable scaling beyond finfet;Loubet;Symp. on VLSI Technol.,2017
5. 5-nm gate-all-around transistor technology with 3-D stacked nanosheets;Gundu;IEEE Trans. Electron. Dev.,2022