Boron diffusion and activation in polysilicon multilayer films for P+ MOS structure: Characterization and modeling
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference12 articles.
1. Gate engineering for deep-submicron CMOS transistors
2. Physical Models of Boron Diffusion in Ultrathin Gate Oxides
3. Boron Diffusion and Activation during Heat Treatment in Heavily Doped Polysilicon Thin Films for P+Metal-Oxide-Semiconductor Transistors Gates
4. Boron diffusion into nitrogen doped silicon films for P+ polysilicon gate structures
5. Reduction of boron penetration through thin silicon oxide with a nitrogen doped silicon layer
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2. An algorithm for boron diffusion in MOS transistors using Silvaco Athena and MATLAB;Phosphorus, Sulfur, and Silicon and the Related Elements;2017-12-29
3. Boron phosphorus and arsenic diffusion in MOS transistors: Simulation and analysis in 2D and 3D;Phosphorus, Sulfur, and Silicon and the Related Elements;2017-12-29
4. Modeling and optimization techniques of boron diffusion parameters in MOS transistor using SILVACO ATHENA and Matlab;MATER RES PROC;2016
5. Complex boron redistribution kinetics in strongly doped polycrystalline-silicon/nitrogen-doped-silicon thin bi-layers;Crystal Research and Technology;2012-07-30
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