Development of all-solution processed CdSe thin film phototransistors with hybrid TiSiOx-PVP dielectric gate-Reference-Cited by-同舟云学术

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Development of all-solution processed CdSe thin film phototransistors with hybrid TiSiOx-PVP dielectric gate

Published:2022-11 Issue: Volume:34 Page:102370
ISSN:2468-0230
Container-title:Surfaces and Interfaces
language:en
Short-container-title:Surfaces and Interfaces

Author:

de Urquijo-Ventura M.S.^ORCID,Garibay-Martínez F.^ORCID,Rao M.G. Syamala,Reddy K. Chandra Sekhar,Martínez-Landeros V.H.^ORCID,Martínez-Guerra E.^ORCID,Ramirez-Bon R.^ORCID

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,General Physics and Astronomy,Condensed Matter Physics,Surfaces and Interfaces,General Chemistry

Reference33 articles.

1. Review on thin-film transistor technology, its applications, and possible new applications to biological cells;Tixier-Mita;Japan. J. Appl. Phys.,2016

2. High- k gate dielectrics for emerging flexible and stretchable electronics;Al-Hashimi;Chem. Rev.,2018

3. Solvent assisted improvement of the dielectric properties and hysteresis behaviour in poly4vinylphenol (PVP) thin films;Shalu;Microelectron. Eng.,2018

4. Dielectric properties of poly(4-vinylphenol) with embedded PbO nanoparticles;Han;Polym. Adv. Technol.,2016

5. Solution-processable alumina: PVP nanocomposite dielectric layer for high-performance organic thin-film transistors;Lin;Appl. Phys. A Mater. Sci. Process.,2018

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Solution-processed transparent PVP:HfO2 hybrid dielectric films with low leakage current density and high k;Surfaces and Interfaces;2023-11

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