Compensation center of Cr3+ in GaAs codoped with Cr and In for obtaining a semi-insulating property-Reference-Cited by-同舟云学术

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Compensation center of Cr3+ in GaAs codoped with Cr and In for obtaining a semi-insulating property

Published:1997-01 Issue:4 Volume:101 Page:219-223
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Park Y.J.,Yeom T.H.,Park I.-W.,Choh S.H.,Min S.-K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference19 articles.

1. Gallium Arsenide Technology;Goronkin,1985

2. GaAs Materials Devices and Circuits;Turner,1985

3. The Preparation of Semi-Insulating Gallium Arsenide by Chromium Doping

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. III Arsenide;Single Crystals of Electronic Materials;2019

2. Theoretical investigation of the local lattice structure of Cr2+ ion at tetragonal sites in GaAs semiconductor;Journal of Alloys and Compounds;2009-05

3. Magnetic and transport properties of III–V diluted magnetic semiconductor Ga1−xCrxAs;Journal of Applied Physics;2001-06

4. Nuclear magnetic relaxation studies of 69Ga, 71Ga, and 75As nuclei in GaAs single crystals doped with paramagnetic impurities;Solid State Communications;1999-06

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