Dislocation-independent mobility in lattice-mismatched epitaxy: application to GaN
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference18 articles.
1. Defect Donor and Acceptor in GaN
2. Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements
3. The effect of doping and growth stoichiometry on the core structure of a threading edge dislocation in GaN
4. Deep acceptors trapped at threading-edge dislocations in GaN
5. Dislocation Scattering in GaN
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