Damages induced by heavy ions in titanium silicon carbide: Effects of nuclear and electronic interactions at room temperature-Reference-Cited by-同舟云学术

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Damages induced by heavy ions in titanium silicon carbide: Effects of nuclear and electronic interactions at room temperature

Published:2009-03 Issue:2 Volume:385 Page:304-307
ISSN:0022-3115
Container-title:Journal of Nuclear Materials
language:en
Short-container-title:Journal of Nuclear Materials

Author:

Nappé J.C.,Grosseau Ph.,Audubert F.,Guilhot B.,Beauvy M.,Benabdesselam M.,Monnet I.

Publisher

Elsevier BV

Subject

Nuclear Energy and Engineering,General Materials Science,Nuclear and High Energy Physics

Reference39 articles.

1. Die Kristallstruktur von Ti3SiC2—ein neuer Komplexcarbid-Typ

2. Solid combustion synthesis of Ti3SiC2

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