Characterization of the Growth of an Oxidation Precursor at Low Temperature on Ofhc Copper-Reference-Cited by-同舟云学术

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Characterization of the Growth of an Oxidation Precursor at Low Temperature on Ofhc Copper

Published:1989 Issue: Volume: Page:625-632
ISSN:0167-2991
Container-title:Structure and Reactivity of Surfaces
language:
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Author:

Machefert J.-M.,Lenglet M.,Blavette D.,Menand A.,Huysser A.D'

Publisher

Elsevier

Reference8 articles.

1. THE OXIDATION OF COPPER FILMS TO CuO0.67

2. Low Temperature Oxidation of Copper. I. Physical Mechanism1a

3. J. M. Machefert, A. D'Huysser, M. Lenglet, J. Lopitaux, D. Delahaye, Mat. Res. Bull. (in press).

4. Characterization of oxide layers on copper by linear potential sweep voltammetry

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2. Copper Oxidation Studied by In Situ Raman Spectroscopy;MRS Proceedings;2003

3. Metal-Oxide Interfacial Evolution in Thermally Grown Oxide Films;MRS Proceedings;2002

4. Heat transfer to metals in low pressure oxygen plasma: application to oxidation of the 90Cu–10Zn alloy;Materials Chemistry and Physics;1999-04

5. Cathodic reduction and infrared reflectance spectroscopy of basic copper(II) salts on copper substrate;Journal of Applied Electrochemistry;1995-09

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