Grinding and lapping induced surface integrity of silicon wafers and its effect on chemical mechanical polishing-Reference-Cited by-同舟云学术

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Grinding and lapping induced surface integrity of silicon wafers and its effect on chemical mechanical polishing

Published:2022-10 Issue: Volume:599 Page:153982
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Gao Shang,Li Honggang,Huang Han,Kang Renke

Funder

Australian Research Council

National Natural Science Foundation of China

Key Technologies Research and Development Program

National Key Research and Development Program of China

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference47 articles.

1. Grinding of silicon wafers: a review from historical perspectives;Pei;Int. J. Mach. Tools Manuf,2008

2. Investigation of long waviness induced by the wire saw process;Teomete;P I Mech. Eng. B-J. Eng.,2011

3. Recent advances and applications of abrasive processes for microelectronics fabrications;Zhong;Microelectron. Int.,2019

4. Chemical effect on the material removal rate in the CMP of silicon wafers;Wang;Wear,2011

5. A review on chemical and mechanical phenomena at the wafer interface during chemical mechanical planarization;Seo;J. Mater. Res.,2021

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