Study of material removal processes of the crystal silicon substrate covered by an oxide film under a silica cluster impact: Molecular dynamics simulation-Reference-Cited by-同舟云学术

Study of material removal processes of the crystal silicon substrate covered by an oxide film under a silica cluster impact: Molecular dynamics simulation

Published:2014-06 Issue: Volume:305 Page:609-616
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Chen Ruling,Wu Yihua,Lei Hong,Jiang Ranran,Liang Min

Funder

NSFC

Innovation Program of Shanghai Municipal Education Commission

Research Fund for the Doctoral Program of Higher Education of China

Tribology Science Fund of State Key Laboratory of Tribology

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference38 articles.

1. On the CMP Material Removal at the Molecular Scale

2. Experimental dynamics characterization and monitoring of MRR in oxide chemical mechanical planarization (CMP) process

3. Process characterization and statistical analysis of oxide CMP on a silicon wafer with sparse data

4. Chemical mechanical planarization for microelectronics applications

5. Single asperity tribochemical wear of silicon by atomic force microscopy

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