Homostructured ZnO-based metal-oxide-semiconductor field-effect transistors deposited at low temperature by vapor cooling condensation system
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
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4. Emission mechanisms of passivated single n-ZnO:In/i-ZnO/p-GaN-heterostructured nanorod light-emitting diodes;Lee;Appl. Phys. Lett.,2010
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