Real dimensional simulation of SiO2 etching in CF4 + H2 plasma
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference18 articles.
1. SiO2 etching in inductively coupled C2F6 plasmas: surface chemistry and two-dimensional simulations
2. Investigation of selective SiO2‐to‐Si etching in an inductively coupled high‐density plasma using fluorocarbon gases
3. Fluorocarbon high‐density plasmas. II. Silicon dioxide and silicon etching using CF4 and CHF3
4. Fluorocarbon high density plasmas. VII. Investigation of selective SiO2‐to‐Si3N4 high density plasma etch processes
5. Role of steady state fluorocarbon films in the etching of silicon dioxide using CHF3 in an inductively coupled plasma reactor
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1. Parameters and Composition of Plasma in a Mixture of CF<sub>4</sub> + H<sub>2</sub> + Ar: Effect of the CF<sub>4</sub>/H<sub>2</sub> Ratio;Микроэлектроника;2024-07-17
2. PLASMA PARAMETRS AND SILICON ETCHING KINETICS IN CF4 + C4F8 + O2 MIXTURE: EFFECT OF CF4/C4F8 MIXING RATIO;ChemChemTech;2024-05-04
3. Parameters and Composition of Plasma in a CF4 + H2 + Ar Mixture: Effect of CF4/H2 Ratio;Russian Microelectronics;2024-02
4. The Influence of Small F2, H2, and HF Additives on the Concentration of Active Particles in Tetrafluoromethane Plasma;Russian Microelectronics;2023-10
5. The Influence of Small F2, H2, and HF Additives on the Concentration of Active Particles in Tetrafluoromethane Plasma;Микроэлектроника;2023-09-01
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