Enhanced tunneling electroresistance effect in Pt/BiAlO3/Pt ferroelectric tunnel junctions by a graphene interlayer-Reference-Cited by-同舟云学术

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Enhanced tunneling electroresistance effect in Pt/BiAlO3/Pt ferroelectric tunnel junctions by a graphene interlayer

Published:2023-05 Issue: Volume:619 Page:156726
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Yuan Jin,Dai Jian-Qing,Liu Yu-Zhu,Zhao Miao-Wei

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference63 articles.

1. D. Griffths, Introduction to Quantum Mechanics, Pearson Prentice Hall, Upper Saddle River, NJ, USA 2005.

2. Tunneling across a ferroelectric;Tsymbal;Science,2006

3. Giant electroresistance in ferroelectric tunnel junctions;Zhuravlev;Phys. Rev. Lett.,2005

4. Theoretical current-voltage characteristics of ferroelectric tunnel junctions;Kohlstedt;Phys. Rev. B,2005

5. Solid-state memories based on ferroelectric tunnel junctions;Chanthbouala;Nat. Nanotechnol.,2012

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1. Influence of point defects on charge transport in nickel ferrite NiFe2O4;Computational Materials Science;2025-01

2. Tunneling electroresistance effect and low ON-state resistance-area product in monolayer-In2Se3-based van der Waals ferroelectric tunnel junctions;Surfaces and Interfaces;2024-03

3. Design high performance field-effect, strain/gas sensors of novel 2D penta-like Pd2P2SeX (X= O, S, Te) pin-junction nanodevices: A study of transport properties;Journal of Alloys and Compounds;2024-03

4. The tunneling electroresistance effect in a van der Waals ferroelectric tunnel junction based on a graphene/In₂Se₃/MoS₂/graphene heterostructure;Physical Chemistry Chemical Physics;2023

5. Tunneling Electroresistance Effect and Low On-State Resistance-Area Product in Monolayer-In2se3-Based Van Der Waals Ferroelectric Tunnel Junctions;2023

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