Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD-Reference-Cited by-同舟云学术

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Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD

Published:2011-01 Issue:6 Volume:257 Page:1996-1999
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Liu Xia,Song Hang,Miao Guoqing,Jiang Hong,Cao Lianzhen,Li Dabing,Sun Xiaojuan,Chen Yiren

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference16 articles.

1. Ga1−xInxAs/InAsyP1−y/InP photodiodes for the 1.6 to 2.4 μm spectral region grown by low pressure MOCVD

2. MOCVD growth of lattice-matched and mismatched InGaAs materials for thermophotovoltaic energy conversion

3. Gas source MBE grown wavelength extended 2.2 and 2.5μm InGaAs PIN photodetectors

4. 2.6 μm InGaAs photodiodes

5. Wide wavelength and low dark current lattice‐mismatched InGaAs/InAsP photodiodes grown by metalorganic vapor‐phase epitaxy

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of InyAl1-yAs graded buffer layer on properties of InP-HEMT materials;J INFRARED MILLIM W;2022

2. Effect of Thickness of InP Nucleation Layer on the Two-Step Growth of InP on Si(001);Crystals;2022-03-26

3. Surface‐interface analysis of In x Ga 1‐x As/InP heterostructure in positive and negative mismatch system;Surface and Interface Analysis;2019-01-14

4. The Effect of Buffer Types on the In0.82Ga0.18As Epitaxial Layer Grown on an InP (100) Substrate;Materials;2018-06-08

5. Effect of thicknesses of InP epilayers on InP/GaAs heterostructure;Surface and Interface Analysis;2017-10-11

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