Electronic structure of dysprosium silicide films grown on a Si(111) surface-Reference-Cited by-同舟云学术

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Electronic structure of dysprosium silicide films grown on a Si(111) surface

Published:2009-11 Issue:4 Volume:256 Page:1156-1159
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Imai Ayako,Kakuta Haruya,Mawatari Kenji,Harasawa Ayumi,Ueno Nobuo,Okuda Taichi,Sakamoto Kazuyuki

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference13 articles.

1. Rare earth overlayers on silicon

2. Low Schottky barrier of rare‐earth silicide onn‐Si

3. The Schottky‐barrier height of the contacts between some rare‐earth metals (and silicides) andp‐type silicon

4. Epitaxial growth of rare‐earth silicides on (111) Si

5. Self-assembled rare-earth silicide nanowires on Si(001)

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Unveiling the stacking-dependent electronic properties of the 2D ultrathin rare-earth metalloxenes family LnX₂ (Ln = Eu, Gd, Dy; X = Ge, Si);Journal of Materials Chemistry C;2024

2. Continuous crossover from two-dimensional to one-dimensional electronic properties for metallic silicide nanowires;Physical Review B;2020-09-24

3. Growth and electronic properties of Tb silicide layers on Si(111);Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2016-11

4. Physical Properties of Surface Silicides;Surface and Interface Science;2013-11-13

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