The origin of the ∼274cm−1 additional Raman mode induced by the incorporation of N dopants and a feasible route to achieve p-type ZnO:N thin films-Reference-Cited by-同舟云学术

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The origin of the ∼274cm−1 additional Raman mode induced by the incorporation of N dopants and a feasible route to achieve p-type ZnO:N thin films

Published:2015-02 Issue: Volume:327 Page:154-158
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Zhang Ping,Kong Chunyang,Li Wanjun,Qin Guoping,Xu Qing,Zhang Hong,Ruan Haibo,Cui Yuting,Fang Liang

Funder

National Natural Science Foundation of China

National Natural Science Foundation

Natural Science Foundation of Chongqing

D&R Projects of Chongqing Education Commission

Fundamental Research Funds for the Central Universities

Sharing Fund of Large-scale Equipment of Chongqing University

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference34 articles.

1. Electrical properties of bulk ZnO

2. Zinc oxide, a multifunctional material: from material to device applications

3. p-type behavior in Na-doped ZnO films and ZnO homojunction light-emitting diodes

4. Stability of p-type conductivity in nitrogen-doped ZnO thin film

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3. Air and Vacuum Annealing Effect on the Highly Conducting and Transparent Properties of the Undoped Zinc Oxide Thin Films Prepared by DC Magnetron Sputtering;Metallurgical and Materials Engineering;2023-03-31

4. Evaluating the response of nitrogen implantation in ZnO ALD thin films and their photocatalytic assessment;Journal of Photochemistry and Photobiology A: Chemistry;2022-12

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