UV assisted low temperature nitridation and post deposition oxidation technique for hafnium oxide gate dielectric-Reference-Cited by-同舟云学术

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UV assisted low temperature nitridation and post deposition oxidation technique for hafnium oxide gate dielectric

Published:2008-08 Issue:21 Volume:254 Page:7087-7091
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Son S.Y.,Jang J.H.,Kumar P.,Ramani K.,Craciun V.,Singh R.K.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference32 articles.

1. Electrical and physical properties of HfO2 films prepared by remote plasma oxidation of Hf metal

2. Thermal stability of nitrogen incorporated in HfNxOy gate dielectrics prepared by reactive sputtering

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photon-assisted oxidation and oxide thin film synthesis: A review;Progress in Materials Science;2009-09

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