The influence of ligands passivation on strength of Fermi level pinning in the quantum dots interface-Reference-Cited by-同舟云学术

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The influence of ligands passivation on strength of Fermi level pinning in the quantum dots interface

Published:2024-08 Issue: Volume:664 Page:160235
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Kwon Namhee^ORCID,Song Seung Ho,Jin Junyoung^ORCID,Kim Seunghwan^ORCID,Kim Kitae^ORCID,Hwang Gyu Weon,Yi Yeonjin^ORCID,Oh Soong Ju,Koch Norbert,Kim Yong-Hoon^ORCID,Hwang Do Kyung,Park Soohyung^ORCID

Publisher

Elsevier BV

Reference51 articles.

1. Opportunities and challenges for quantum dot photovoltaics;Kovalenko;Nat. Nanotechnol.,2015

2. 2D–organic hybrid heterostructures for optoelectronic applications;Sun;Adv. Mater.,2019

3. Efficient and stable blue quantum dot light-emitting diode;Kim;Nature,2020

4. Near-infrared imaging with quantum-dot-sensitized organic photodiodes;Rauch;Nat. Photon.,2009

5. Hybrid graphene–quantum dot phototransistors with ultrahigh gain;Konstantatos;Nat. Nanotechnol.,2012

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chlorine passivation of PbS quantum dots in all solid glass matrix for high efficiency luminescence;Journal of Alloys and Compounds;2024-11

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