Simulation of real I-V characteristics of metal/GaN/AlGaN heterostructure based on the 12-EXT model of trap-assisted tunnelling
Author:
Funder
Scientific Grant Agency
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
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1. Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band;IEEE Transactions on Electron Devices;2024-08
2. Vertical current transport processes in MOS-HEMT heterostructures;Applied Surface Science;2020-10
3. Deriving the exchange times for a model of trap-assisted tunnelling;Journal of Electrical Engineering;2020-02-01
4. A model of antiparallel spontaneous and piezoelectric polarizations in AlGaN/GaN;APPLIED PHYSICS OF CONDENSED MATTER (APCOM 2019);2019
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