Achievement of normally-off AlGaN/GaN high-electron mobility transistor with p-NiOx capping layer by sputtering and post-annealing-Reference-Cited by-同舟云学术

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Achievement of normally-off AlGaN/GaN high-electron mobility transistor with p-NiOx capping layer by sputtering and post-annealing

Published:2017-04 Issue: Volume:401 Page:373-377
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Huang Shyh-Jer,Chou Cheng-Wei,Su Yan-Kuin,Lin Jyun-Hao,Yu Hsin-Chieh,Chen De-Long,Ruan Jian-Long

Funder

Ministry of Science and Technology of Taiwan, ROC

ational Chung-Shan Institute of Science & Technology

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference19 articles.

1. AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz

2. High-power AlGaN/GaN HEMTs for Ka-band applications

3. Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of post fabrication annealing on device performance of InAlN/GaN high electron mobility transistors;Journal of Physics and Chemistry of Solids;2024-04

2. Annealing Temperature Effect on the Physical Properties of NiO Thin Films Grown by DC Magnetron Sputtering;Advanced Materials Interfaces;2024-01-12

3. Using thin-film transistor with thick oxygen-doped Si–Zn–Sn–O channel and patterned Pt/NiO capping layer to enhance ultraviolet light sensing performance;Japanese Journal of Applied Physics;2024-01-04

4. Vertical GaN Schottky Barrier Diode With Hybrid P-NiO Junction Termination Extension;IEEE Journal of the Electron Devices Society;2024

5. E-mode AlGaN/GaN HEMTs using p-NiO gates;Journal of Vacuum Science & Technology B;2023-11-08

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