Synthesis of n-type boron phosphide films and formation of Schottky diode: Al/n-BP/Sb-Reference-Cited by-同舟云学术

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Synthesis of n-type boron phosphide films and formation of Schottky diode: Al/n-BP/Sb

Published:2008-03 Issue:11 Volume:254 Page:3540-3547
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Dalui S.,Pal A.K.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference24 articles.

1. Preparation of III–V Compounds;Williams,1962

2. Semiconductors and Semimetals;Stirn,1970

3. Boron and Boron-based semiconductors

4. Refractory semiconductor of boron phosphide

5. Optical Absorption, Electroluminescence, and the Band Gap of BP

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2. Hydrogenated boron phosphide with the excellent tunability of electronic properties and Current-Voltage responses;Applied Surface Science;2022-01

3. 7. Boron phosphide thin films;Infrared Antireflective and Protective Coatings;2018-03-05

4. Consistency in Al/CuPc/n-Si Heterojunction Diode Parameters Extracted Using Different Techniques;Journal of Electronic Materials;2015-12-09

5. Characteristics of Ohmic Contacts to n-Type Boron Phosphide;Japanese Journal of Applied Physics;2013-03-01

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