Low temperature solution-processed IGZO thin-film transistors-Reference-Cited by-同舟云学术

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Low temperature solution-processed IGZO thin-film transistors

Published:2018-10 Issue: Volume:455 Page:554-560
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Xu Wangying,Hu Luyao,Zhao Chun,Zhang Lingjiao,Zhu Deliang,Cao Peijiang,Liu Wenjun,Han Shun,Liu Xinke,Jia Fang,Zeng Yuxiang,Lu Youming

Funder

National Natural Science Foundation of China

Natural Science Foundation of Guangdong Province

Science and Technology Foundation of Shenzhen

Natural Science Foundation of SZU

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference26 articles.

1. Toward high-performance amorphous GIZO TFTs;Barquinha;J. Electrochem. Soc.,2009

2. Metal oxides for optoelectronic applications;Yu;Nat. Mater.,2016

3. Oxide semiconductor thin-film transistors: a review of recent advances;Fortunato;Adv. Mater.,2012

4. Material characteristics and applications of transparent amorphous oxide semiconductors;Kamiya;NPG Asia Mater.,2010

5. Metal oxide semiconductor thin-film transistors for flexible electronics;Petti;Appl. Phys. Rev.,2016

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