Design of a new two-dimensional diluted magnetic semiconductor: Mn-doped GaN monolayer-Reference-Cited by-同舟云学术

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Design of a new two-dimensional diluted magnetic semiconductor: Mn-doped GaN monolayer

Published:2017-02 Issue: Volume:396 Page:480-483
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Zhao Qian,Xiong Zhihua,Luo Lan,Sun Zhenhui,Qin Zhenzhen,Chen Lanli,Wu Ning

Funder

National Natural Science Foundation of China

Young Scientist Program of Jiangxi Province

Science Foundation of Jiangxi Province

Innovation Team in JXSTNU

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference44 articles.

1. First-principles theory of dilute magnetic semiconductors

2. Semiconductor Spintronics and Quantum Computation;Awschalom,2002

3. Making Nonmagnetic Semiconductors Ferromagnetic

4. Ferromagnetic semiconductors: moving beyond (Ga,Mn)As

5. Theory of ferromagnetic (III,Mn)V semiconductors

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1. The stability, electronic and optical properties of nonmetal doped g-GaN: A first-principles calculation;Solid State Communications;2024-12

2. Influence of the electric field on the electronic structure of flat hexagonal two-dimensional GaN bilayers;Materials Today Communications;2024-12

3. Tunable electronic structure and optical properties of GaN monolayer via substituted doping and strain;Materials Today Communications;2024-06

4. Theoretical investigation of fluorine-decorated gallium nitride monolayers with vacancy and doping defects;Physica B: Condensed Matter;2024-03

5. Electronic Properties and Magnetism of VN/Ga₂O₂/VN Spin Valves;ACS Applied Electronic Materials;2024-01-04

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