X-ray metrology for advanced silicon processes

Author:

Wyon C.,Gonchond J.P.,Delille D.,Michallet A.,Royer J.C.,Kwakman L.,Marthon S.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference7 articles.

1. Anticipation of nitrided oxides electrical thickness based on XPS measurement

2. K.J. Kozaczek, D.S. Kurtz, P.R. Moran, R.I. Martin, L-Y. Huang, A. Stratilatov, Proceedings of the 2003 International Conference on Characterization and Metrology for ULSI technology.

3. D. Agnihotri, J. Formica, J. Gallegos, J. O’Dell, Proceedings of the 2003 International Conference on Characterization and Metrology for ULSI technology.

4. In-line monitoring of advanced microelectronic processes using combined X-ray techniques

5. J.P. Gonchond, C. Wyon, F. Cacho, G. Braeckelmann, G. Rolland, L. Kwakman, Y. Tsach, D. Agnihotri, J. Formica, Proceedings of the 2005 International Conference on Characterization and Metrology for ULSI Technology.

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