Characterization of GaN layers grown on silicon-on-insulator substrates
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
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3. Ellipsometric study of GaN/AlN/Si(111) heterostructures grown by molecular beam epitaxy;IOP Conference Series: Materials Science and Engineering;2014-06-17
4. Study of Substrate Induced Deep Level Defects in Bulk GaN Layers Grown by Molecular Beam Epitaxy Using Deep Level Transient Spectroscopy;Advanced Materials Research;2011-07
5. Fabrication and Characterization of a Ruthenium Nitride Membrane for Electrochemical pH Sensors;Sensors;2009-04-09
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