Enhancement of piezoelectric response of diluted Ta doped AlN-Reference-Cited by-同舟云学术

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Enhancement of piezoelectric response of diluted Ta doped AlN

Published:2013-04 Issue: Volume:270 Page:225-230
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Liu Hongyan,Zeng Fei,Tang Guangsheng,Pan Feng

Funder

National Hi-tech (R&D) project of China

National Basic Research Program of China

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference36 articles.

1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres;Taniyasu;Nature,2006

2. Influence of strain and grain boundary variations on magnetism of Cr-doped AlN films;Fan;Journal of Applied Physics,2009

3. Low-temperature plasma-assisted growth of optically transparent, highly oriented nanocrystalline AlN;Mirpuri;Journal of Applied Physics,2007

4. Influence of inserting AlN between AlSiON and 4HSiC interface for the MIS structure;Komatsu;Applied Surface Science,2011

5. The effect of geometry and post-annealing on surface acoustic wave characteristics of AlN thin films prepared by magnetron sputtering;Phan;Applied Surface Science,2011

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1. Investigation of Piezoelectric Properties of Wurtzite AlN Films under In-Plane Strain: A First-Principles Study;Coatings;2024-08-04

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3. Recent progress in piezoelectric thin films as self-powered devices: material and application;Frontiers in Materials;2024-04-25

4. The elasticity and piezoelectricity of AlN containing charged vacancies;International Journal of Optomechatronics;2024-04-16

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