Surface modulation to enhance chemical mechanical polishing performance of sliced silicon carbide Si-face-Reference-Cited by-同舟云学术

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Surface modulation to enhance chemical mechanical polishing performance of sliced silicon carbide Si-face

Published:2021-01 Issue: Volume:536 Page:147963
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Chen Gaopan,Li Jianguo,Long Jiangyou,Luo Haimei,Zhou Yan,Xie Xiaozhu,Pan Guoshun

Funder

National Key R&D Program of China

National Natural Science Foundation of China

Science and Technology Planning Project of Guangdong Province of China

Science, Technology and Innovation Commission of Shenzhen Municipality

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference27 articles.

1. Effects of ultra-smooth surface atomic step morphology on chemical mechanical polishing (CMP) performances of sapphire and SiC wafers;Zhou;Tribol. Int.,2015

2. Highly efficient and damage-free polishing of GaN (0001) by electrochemical etching-enhanced CMP process;Zhang;Appl. Surf. Sci.,2020

3. Chemical mechanical polishing (CMP) of on-axis Si-face 6H-SiC wafer for obtaining atomically flat defect-free surface;Pan;J. Mater. Sci. Mater. Electron.,2013

4. Chemical mechanical planarization (CMP) of on-axis Si-face SiC wafer using catalyst nanoparticles in slurry;Zhou;Surf. Coat. Technol.,2014

5. UV-TiO2 photocatalysis-assisted chemical mechanical polishing 4H-SiC wafer;Yuan;Mater. Manuf. Process,2018

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1. Unveiling the synergistic interaction: Investigating the enhanced mechanism of 4H–SiC chemical mechanical polishing with the addition of sodium silicate and manganese dioxide;Materials Science in Semiconductor Processing;2024-12

2. Evaluation of grinding performance and removal mechanism of epoxy resin coated single crystal SiC;Tribology International;2024-12

3. Research on composite pattern design and lapping performance of fixed abrasive pads controlled by multi-physical fields;Precision Engineering;2024-12

4. Microscopic removal mechanism of 4 H-SiC during abrasive scratching in aqueous H2O2 and H2O: Insights from ReaxFF molecular dynamics;Tribology International;2024-12

5. Nanosecond laser irradiation assisted chemical mechanical polishing (CMP) process for promoting material removal of single crystal 4H–SiC;Ceramics International;2024-10

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