Thermal roughening of GaAs surface by unwinding dislocation-induced spiral atomic steps during sublimation-Reference-Cited by-同舟云学术

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Thermal roughening of GaAs surface by unwinding dislocation-induced spiral atomic steps during sublimation

Published:2020-11 Issue: Volume:529 Page:147090
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Kazantsev D.M.,Akhundov I.O.,Rudaya N.S.,Kozhukhov A.S.,Alperovich V.L.,Latyshev A.V.

Funder

Russian Science Foundation

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference48 articles.

1. Crystal surfaces in and out of equilibrium: a modern view;Misbah;Rev. Mod. Phys.,2010

2. 2D Si island nucleation on the Si(111) surface at initial and late growth stages: On the role of step permeability in pyramidlike growth;Rogilo;J. Cryst. Growth,2017

3. Growth and self-organization of SiGe nanostructures;Aqua;Phys. Rep.,2013

4. Two-dimensional nanostructured growth of nanoclusters and molecules on insulating surfaces;Barth;Adv. Mat.,2012

5. Two-dimensional superconductors with atomic-scale thickness;Uchihashi;Supercond. Sci. Technol.,2017

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Crystalline Flat Surface Recovered by High-Temperature Annealing after Laser Ablation;Photonics;2023-05-19

2. Kinetically driven thermal roughening of semiconductor surfaces: experiment on GaAs and Monte Carlo simulation;Physica Scripta;2023-02-08

3. Epitaxial Growth of the Bi_ySb_2–yTe_3–xSe_x 3D Topological Insulator: Physical Vapor Deposition and Molecular Beam Epitaxy;Crystal Growth & Design;2022-11-02

4. LSAT (001) termination: An investigation on the influence of annealing parameters on topography;Physica B: Condensed Matter;2022-09

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