The influence of NH3 flow rate on the microstructure and oxidation properties of a-Si-C-N:H films prepared by PECVD technology-Reference-Cited by-同舟云学术

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The influence of NH3 flow rate on the microstructure and oxidation properties of a-Si-C-N:H films prepared by PECVD technology

Published:2020-05 Issue: Volume:513 Page:145861
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Jiang Lihua,Tian Haiyan,Li Jie,Xiang Peng^ORCID,Peng Yu,Wang Tao,Hou Pingping,Xiao Ting^ORCID,Tan Xinyu

Funder

Higher Education Discipline Innovation Project

National Natural Science Foundation of China

Department of Science and Technology of Sichuan Province

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference37 articles.

1. Characterization of SiCN thin films: experimental and theoretical investigations;Ivashchenko;Thin Solid Films,2014

2. PECVD synthesis, optical and mechanical properties of silicon carbon nitride films;Ermakova;Appl. Surf. Sci.,2015

3. Study of structural and electronic environments of hydrogenated amorphous silicon carbonitride (a-SiCN:H) films deposited by hot wire chemical vapor deposition;Swain;Appl. Surf. Sci.,2008

4. Influence of the PVD sputtering method on structural characteristics of SiCN-coatings—comparison of RF, DC and HiPIMS sputtering and target configurations;Pusch;Surf. Coat. Technol.,2011

5. Silicon precursor development for advanced dielectric barriers for VLSI technology;Mallikarjunan;Microelectron. Eng.,2012

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of plasma power on growth process, chemical structure, and properties of PECVD films produced from hexamethyldisilane and ammonia;Surface and Coatings Technology;2024-08

2. Impact of H-Related Chemical Bonds on Physical Properties of SiNx:H Films Deposited via Plasma-Enhanced Chemical Vapor Deposition;Electronics;2024-07-15

3. Effect of annealing in air on the properties of carbon-rich amorphous silicon carbide films;Semiconductor Physics, Quantum Electronics and Optoelectronics;2024-03-12

4. 1,4-Bis(trimethylsilyl)piperazine—Thermal Properties and Application as CVD Precursor;Coatings;2023-06-05

5. Synthesis, Properties and Aging of ICP-CVD SiCxNy:H Films Formed from Tetramethyldisilazane;Coatings;2022-01-11

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